1203.1701 (Yosuke Harashima et al.)

Effect of electron-electron interaction near the metal-insulator
transition in doped semiconductors studied within the local density
approximation    [PDF]

Yosuke Harashima, Keith Slevin

We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron interactions between the carriers using density functional theory in the local density approximation. Preliminary results suggest that the model exhibits a metal-insulator transition.

View original: http://arxiv.org/abs/1203.1701