Subhamoy Ghatak, Atindra Nath Pal, Arindam Ghosh
We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the electronic states in all films are localized well up to the room temperature over the experimentally accessible range of gate voltage. This manifests in two dimensional (2D) variable range hopping (VRH) at high temperatures, while below \sim 30 K the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T0) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate are the dominant source of disorder in MoS2 field effect devices, which leads to carrier localization as well.
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http://arxiv.org/abs/1203.5656
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