1206.5482 (Dan Mendels et al.)
Dan Mendels, Nir Tessler
It is well established by now that hopping in realistic density of states (Gaussian and/or exponential) is accompanied by the mobility being both electric field and charge density dependent. It is also known that under most, modern, experimental conditions the semiconductor that constitutes the hopping system is degenerate. In this paper we revisit the drift diffusion process in the context of degenerate hopping systems and show that the use of this equation, i.e. neglecting the energy transport, leads to the mobility as well as the Einstein relation to be dependent not only on the charge density but also on the charge density gradient.
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http://arxiv.org/abs/1206.5482
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