S. V. Novikov, A. P. Tyutnev, L. B. Schein
Using Monte Carlo simulation we investigated time of flight current transients predicted by the dipolar glass model for a random spatial distribution of hopping centers. Behavior of the carrier drift mobility was studied at room temperature over a broad range of electric field and sample thickness. A flat plateau followed by $j\propto t^{-2}$ current decay is the most common feature of the simulated transients. Poole-Frenkel mobility field dependence was confirmed over 5 to 200 V/$\mu$m as well as its independence of the sample thickness. Universality of transients with respect to both field and sample thickness has been observed. A simple phenomenological model to describe simulated current transients has been proposed. Simulation results agree well with the reported Poole-Frenkel slope and shape of the transients for a prototype molecularly doped polymer.
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http://arxiv.org/abs/1303.4855
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